ON Semiconductor mld1n06cl free download

File name mld1n06cl.pdf

MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications http://onsemi.com include automotive fuel injector driver, incandescent lamp driver or other applications where a high in-rush current or a shorted load V(BR)DSS RDS(on) TYP ID MAX condition could occur. 62 V (Clamped) 750 mW 1.0 A This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage N-Channel protection and Sensefet technology for low on-resistance. No D additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device R1 to be applied without use of external transient suppression G components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is R2 essentially independent of operating temperature. Features S